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15:30 - 16:00
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Manuscript ID. 0088
Paper No. 2019-THU-S0102-I001
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Invited Speaker:
Milton Feng
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Direct Intra-Cavity Tunneling Modulation in Semiconductor Laser for Energy Efficient High-Speed Data Transmission
Milton Feng
Direct current modulated VCSELs for high-speed optical link have been widely deployed in large-scale data centers due to its energy-efficient data transmission. However, the modulation speed is limited by the e-h recombination lifetime (~ 200 ps) and bandwidth (~ 30 GHz) @ room temperature.
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16:00 - 16:15
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Manuscript ID. 0740
Paper No. 2019-THU-S0102-O001
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Siti Sulikhah
Award Candidate
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Comparison of High-Speed Directly Modulated Passive Feedback Lasers with Uniform Grating and Partially Corrugated Grating DFB Structures
Siti Sulikhah;San Liang Lee;Hen Wai Tsao
The modulation response of a high-speed directly modulated passive feedback laser is enhanced by partial corrugated grating (PCG) structure to increase waveform and eye opening for PAM-4 transmission. 3-dB bandwidth of >34GHz and >8.7-dB ER can be achieved by using a DFB laser of 150-μm for 200-μm long lasers.
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16:15 - 16:30
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Manuscript ID. 0308
Paper No. 2019-THU-S0102-O002
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Yun-Ting Huang
Award Candidate
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Monolithically Integrated Optical NOR Gate Using Light-Emitting Transistors
Yun-Ting Huang;Hsuan-Han Chen;Chao-Hsin Wu
We develop an optical NOR gate using Light-Emitting Transistors (LET) on GaAs substrate by the monolithically integrated fabrication. Because the NOR gate can output the optical and the electrical signal, it can take advantage of Opto-Electrical Integrated Circuits (OEICs) technology and transmit the information more efficiently.
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16:30 - 16:45
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Manuscript ID. 0346
Paper No. 2019-THU-S0102-O003
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Meng-Yu Tsai
Award Candidate
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GHz Optical Frequency Modulation from Light Emitting Diodes by Surface Acoustic Waves
Meng-Yu Tsai;Szu-Yu Pan;Jian-Jang Huang
We propagate acoustic waves by GaN, and through the SAWs, the light output power of the light emitting diodes (LEDs) can be increased by ~2.5%. In addition, if the low frequency electrical and acoustic signal is coupled into the LEDs, the light source will generate ~GHz light oscillation.
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16:45 - 17:00
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Manuscript ID. 0757
Paper No. 2019-THU-S0102-O004
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Zhang Yu Ting
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InGaN Resonant Cavity Light-Emitting Diode with Double Porous-GaN Distributed Bragg Reflectors
Zhang Yu Ting;Chang Chao Yu;Chen Dong Sheng;Wu Chia Jung;Wang Cheng Jie;Lin Chia Feng
Electroluminescence spectrum has been demonstrated in full epitaxial InGaN resonant-cavity light-emitting-diode (RC-LED). Epitaxial n+-GaN:Si/n-GaN:Si stack structures were transformed into top/bottom porous-GaN:Si/n-GaN:Si distributed Bragg reflectors through an electrochemical wet etching process. N+-porous-GaN/p+-GaN tunneling junction is designed for current injection. Line-width and divergent angle reducing properties were observed in RC-LED structure
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17:00 - 17:15
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Manuscript ID. 0762
Paper No. 2019-THU-S0102-O005
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Wei-Sheng Liu
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Investigation of InAs submonolayer quantum-dot solar cell with InGaAs/GaAsSb dot-in-a-double-well structure
Wei-Sheng Liu;Ting-Kai Yang;Yi-Miao Hua;Kai-Chun Ma;Jen-Inn Chyi
In this study, multistacked InAs submonolayer (SML) quantum dots (QDs) were sandwiched in an InGaAs/GaAsSb dot-in-a-double-well (DDwell) structure to enhance the crystal quality and optical properties of InAs SML QDs, as well as the device performance, short-circuit current density and open-circuit voltage of QD solar cell (QDsC).
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