13:30 - 14:00
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Manuscript ID. 0021
Paper No. 2019-FRI-S0103-I001
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Invited Speaker: Yuichiro Kato
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Single-carbon-nanotube photonics and optoelectronics
Yuichiro Kato
Single-walled carbon nanotubes have unique optical properties as a result of their one-dimensional structure. Reduced screening leads to large exciton binding energies which allow for room-temperature excitonic luminescence, while enhanced interactions give rise to a variety of exciton processes that may be utilized for modulating the emission properties.
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14:00 - 14:15
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Manuscript ID. 0418
Paper No. 2019-FRI-S0103-O001
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Govindasamy Madhaiyan
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Effect of UV irradiation on solution processed organic semiconductor based nitric oxide gas sensor
Govindasamy Madhaiyan;Hsiao Wen Zan;Hong Cheu Lin
In this work, we fabricated a highly sensitive and selective organic vertical diode using PBDTTT-C-T organic semiconductor to detect nitric oxide (NO) gas down to 10 ppb. In addition, the influence of ultra violet (UV) irradiation on organic semiconductor based gas sensors has been investigated.
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14:15 - 14:30
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Manuscript ID. 0456
Paper No. 2019-FRI-S0103-O002
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Hsin Yu Kuo
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Achromatic Metalens Array for Light-field Imaging in Visible
Hsin Yu Kuo;Ren Jie Lin;Cheng Hung Chu;Mu Ku Chen;Vin-Cent Su;Yu Han Chen;Yi-Teng Huang;Jia-Wern Chen;Yu-Jung Lu;Din Ping Tsai
Light-field camera captures the intensity and the direction of incoming light. This enables user to refocus pictures and afterwards reconstruct information on the depth. Here, we describe a metalens array made of GaN nanoantennas that is able to capture light-field information and demonstrate a full-color light-field devoid of chromatic aberration.
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14:30 - 14:45
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Manuscript ID. 0347
Paper No. 2019-FRI-S0103-O003
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Po-Wei Chen
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High Photo-Response of Aluminum-Gallium Oxide Deep-Ultraviolet Photodetectors by Pulsed Laser Deposition
Po-Wei Chen;Shiau-Yuan Huang;Shuo-Huang Yuan;Yi-An Chen;Po-Wen Hsiao;Dong-Sing Wuu
The wide-bandgap aluminum-gallium oxide (AGO) deep-ultraviolet photodetector (PD) is deposited by pulsed laser deposition. The superior responsivity of AGO PDs at the bandgap of 5.2 eV is 0.5 A/W (at 5 V and wavelength of 240 nm), which had 20.7 times greater than that of the bandgap at 4.9 eV.
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14:45 - 15:00
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Manuscript ID. 0291
Paper No. 2019-FRI-S0103-O004
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Kuan Chih Huang
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Characteristics of Photonic Crystal Surface Emitting Lasers integrated with Metal Grating
Kuan Chih Huang;Lih Ren Chen;Hsiu Ling Chen;Tien Chang Lu
We demonstrate photonic crystal surface emitting lasers with vertically integrated metal grating and investigate the laser output characteristics. The influence of LIV and optical characteristics of grating structure on top of PCSEL is investigated. The promising results indicates the potential for application of 3D sensing and Lidar systems.
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15:00 - 15:15
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Manuscript ID. 0776
Paper No. 2019-FRI-S0103-O005
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Yi-Chun Liu
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Effect of Silicon Quantum Dots Doping for an Organic Light-Emitting Diode
Yi-Chun Liu;Han-Yun Wei;Thiyagu Subraman;Naoki Fukata;Zingway Pei
The solution-processed Si QDs were used as dopant in the organic luminescent materials to enhance the transport behavior. By doping the Si QDs, the luminous efficacy of the Si QDs was increased from 1.7 lm/W to around 6 lm/W, which enhanced 252 %.
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