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15:30 - 16:00
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Manuscript ID. 0038
Paper No. 2019-THU-S1002-I001
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Invited Speaker:
Hsuen-Li Chen
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Techniques of Optical Analysis for Nanomaterials and Structured Optoelectronic Devices
Hsuen-Li Chen
The optical anisotropy of graphene films could be used as an alternative quality factor for the rapid characterization of large-area graphene films prepared through chemical vapor deposition (CVD). We develop an angle-variable spectroscopic method to rapidly determine the optical anisotropy of graphene films.
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16:00 - 16:15
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Manuscript ID. 0523
Paper No. 2019-THU-S1002-O001
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PENG HSUAN HUANG
Award Candidate
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Annealing effect on the properties of ZnGa2O4-based thin-film phototransistors
PENG HSUAN HUANG;Yuan Chu Shen;Ray Hua Horng
Thin-film phototransistors were fabricated and studied on various epitaxial ZnGa2O4 thin films for deep-ultraviolet (DUV) application. For as-grown E-mode phototransistor, it presented a high responsivity but low rejection ratio and long response time. After annealing treatment, the performances were well improved, promoting the feasibility in this application.
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16:15 - 16:30
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Manuscript ID. 0804
Paper No. 2019-THU-S1002-O002
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Chen-Wen Huang
Award Candidate
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Fabrication of Gallium Nitride Thin Films by Using the Reactive DC Pulse Magnetron Sputtering
Chen-Wen Huang;Shung-Ying Liao;Sheng-Hui Chen
In this study, the positive applied bias on the substrate can optimize the crystallization quality of gallium nitride films. And the negative applied bias on the substrate can improve the uniformity and reduce the surface roughness.
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16:30 - 16:45
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Manuscript ID. 0754
Paper No. 2019-THU-S1002-O003
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Kuo Chung Yu
Award Candidate
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High Reflective Deep-UV Porous AlGaN Distributed Bragg Reflectors
Kuo Chung Yu;Wu Chia Jung;Chang Chao Yu;Chen Dong Sheng;Chang Wei En;Wang Sheng Min;Wang Cheng Jie;Lin Chia Feng
Porous AlGaN distributed Bragg reflectors (DBR) structure at DUV wavelength region had been demonstrated through the Si-doping selective EC wet etching process. High reflectivity, conductive porous, and low-strain were observed in porous-AlGaN DBR structure that has potential for the high efficiency deep-UV optoelectronic device applications.
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16:45 - 17:00
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Manuscript ID. 0393
Paper No. 2019-THU-S1002-O004
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Yu-Lun Hsieh
Award Candidate
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Dynamic Range Issue of TFT APS Readout Circuit
Yu-Lun Hsieh;Cheng-Che Tu;Ya-Hsiang Tai
The threshold voltage shift under irradiation will harm the dynamic range of readout signal. It results in decrease of the readout resolution. In this article, we adopt in-pixel Vth compensation circuit to improve the readout dynamic range. Simulation results show that proposed circuit successfully improve the signal dynamic range.
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17:00 - 17:15
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Manuscript ID. 0788
Paper No. 2019-THU-S1002-O005
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Ying Ke
Award Candidate
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Optimized the Optical Property of 1λ InGaN Resonant Microcavity Structure with Porous-GaN Reflector
Ying Ke
InGaN resonant cavity light emitting diodes (RC-LED) consisted of an embedded
nanoporous-GaN distributed Bragg reflectors (DBRs) and a top dielectric reflector. Ta2O5
compensated layer was inserted and optimized to match 1 micro-cavity structure. Optical
pumped lasing property was observed in InGaN RC-LED at 420.6 nm with a 0.7 nm line-width.
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