Session Index

The angle insensitive broadband near perfect absorber can be achieved without any structural pattern. The average absorption from 1000 nm to 2000 nm at normal incident is over 95%. The average absorption slightly decreased to 93.7% when the incident angle changed to 45 degrees.

 

Color-blindness mathematical model based on the spectral movement in CIExy color space is constructed and is confirmed by numerical simulations involved amplitudes, a shift of three cone-shaped cells, and notch spectra of color blind glasses. According to the notch spectra, color-blind glasses are designed to correct the color vision deficiencies.

 

We present the studies on the thermal and optical properties of copper-based Cu/Invar/Cu (CIC) substrates who’s coefficient of thermal expansion was tuned to very close to GaAs substrate and AlGaInP epilayer. By the high thermal conductivity of CIC, the performance and temperature distribution of the packaged CIC LEDs are improved.

 

We have successfully fabricated oxide thin-film transistors (TFTs) with ITiO as the channel layer and performs a high mobility of 37.62 cm2/V-s. The characteristics were optimized by tuning oxygen-argon ratio and annealing temperature. This is highly promising for the applications of next-generation transparent displays and Internet of Things (IoT) technologies.

 

We apply screen-printed method for light extraction layer fabrication for an organic light-emission diode. Screen-printing is a large-area, solution-processed, and low cost.The high refraction index of TiO2 cause the light could be extracted smoothly at glass/TiO2 interface. By incorporating screen-printed TiO2 nanocomposite, the luminescence efficiency enhanced over 65%.


 

HfO2/ZnO superlattices are grown by atomic layer deposition (ALD). Thin film transistor of HfO2:ZnO = 1:10 shows excellent characteristics of μFE = 24.5 cm2/V-s, On/Off ratio = 1.1 x106, and subthreshold swing = 2.59 V/decade.

 

Heat dissipation efficiency of Si photonics system was optimized by thinning, electroplating copper and TSV technology. Thermal resistance of heat dissipation system was derived by shift phenomenon of laser and input-power. Maximum output-power of laser was increased by 60% and thermal resistance is reduced by 25% using optimized heat dissipation.

 

The interfacial force between germanium and silicon dioxide thin films was obtained by experimental measurements. The residual stress of the mid-infrared (SiO2/Ge)x multilayer thin films was predicted by a modified Ennos’s formula. The stress difference between the measured and predicted values is 0.019 GPa for the 20-layer band-pass filter.

 

The study is to develop LED light-source for wearable devices. Three kinds of LEDs (green、red & infrared) with size 40 mil were bonded on flexible circuit substrate by ACF and silver gel. The I-V measurement shown the turn-on voltages < 2.5 V and output power were > 40 mW.

 

This work studied the effects of phycoerythrin on the performance of the IGZO thin film semiconductor photodetector. By capping the phycoerythrin, the absorption range of the photodetector can be expanded to the visible light band, while the original IGZO structure can only work on the ultraviolet light band.

 

The HfO2 and Al2O3 films were deposited by using RF magnetron sputtering. Make a double layer of insulation and a co-sputter insulation. Finally, analyze the surface roughness of the film and the electrical measurement of the thin film transistor (TFT).

 

In this study, we demonstrated a fabrication for a self-powered metal-semiconductor-metal (MSM) UV PD based on nontoxic and earth abundant ZnSnO (ZTO). The self-power characteristic is attributed to the hole-trapping process, resulting in asymmetric Schottky barrier heights (SBHs) for MSM PD.

 

In this study, ultrasonic nano-polymer electrolyte membrane was prepared by ultrasonic spray deposition (USD) technology with polymethyl methacrylate (PMMA) as the matrix and silicon dioxide as the second phase. The annealing procedure improves the uniformity and transmission of the film. The hardness and elastic modulus are superior to commercial materials.

 

We deposited SiO2 optical thin films by sputtering and electron beam deposition on molded substrates. The film obtained by the combination method showed much lower compressive stress than those obtained by sputtering or electron beam deposition alone.

 

The one-snap angle-resolved spectroscopy (OSARS) capable of electroluminescence (EL) measurements for planar light source is established. We apply the OSARS to investigate the angular dependence of EL spectrum of NPB/Alq3 OLEDs, and explore how the micro-cavity effect influences the spectrum.

 

We demonstrate that the vertical organic field-effect transistors with an appropriate phosphonic acid self-assembled monolayer (SAM) modification can achieve a simultaneous enhancement of on-current and ON/OFF ratio. Further structural characterizations show that the enhanced conduction can be attributed to the formation of an enlarged grain size by SAM modification.

 

The top-emitting vertical organic light-emitting transistor (VOLET) is demonstrated by integration of a C60 vertical organic field-effect transistor (VOFET) and a blue phosphorescent inverted organic light-emitting diode (IOLED). The presented VOLET with a maximum external quantum efficiency of 3.1% is demonstrated.

 

A gelatin layer doped with potassium dichromate was applied by spin coating
on SPR fiber sensors based on nano-silver or nano-gold film for the alcohol concentration
measurement. Results have shown that the SPR sensors we proposed have a significant
increase in the sensitivity for the high concentration alcohol solutions sensing.


 

An IWO ultraviolet photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration.

 

We propose a new SERS substrate with 3D ZnO/Ag nanostructures produced on the ferroelectric templates. The strengthened electric field induced by electron accumulation on the ZnO/Ag interface and the enhanced surface-to-volume ratio favored by 3D nanostructures produce as high as 12.1 times Raman signal enhancement compared to the conventional samples.

 

A polycrystalline Si thin-film transistor (TFT) with high performance is realized by CMOS-compatible processes of low thermal-budget, including channel laser-crystallization, channel thinning/planarization and source/drain laser-activation by embedding multilayers of SiO2/Al/SiO2 at the a-Si/polyimide interface.

 

Our objective is increase our OLED lumen efficiency and decrease the turn on voltage, the mainly method is use different hole injection layer parameters. Experimental results, heating Molybdenum oxide thin film can reduce turn on voltage from 8.2V to 6.2V by heatin, but device without heating has higher Luminous efficacy.

 

In this study, we have successfully prepared Ga2o3 resistive random access memory by RF magnetron sputtering. the Ga2O3 with 20% of oxygen concentration exhibited the outstanding electrical properties with maximum cycles of 88, an Ion/Ioff ratio of 2 × 104, HRS/LRS ratio of 2 × 104 under 0.1V read voltage.

 

Effects of beam splitters and a prism film on the short current of solar cell in the optical solar concentrator were investigated. The beam splitters, composed of TiO2 and SiO2 films, with close to 80%, 50% and 20% average transmittance in the visible range were fabricated by electron beam evaporation.

 

β-Ga2O3 films were grown on (010) LiGaO2 and (0001) sapphire substrates by HVPE. The surface morphologies and crystal structures of as-grown films were examined by scanning electron microscopy and X-ray diffraction respectively. The transmission spectrum exhibited the band gap of as-grown β-Ga2O3 film was 4.67 eV.

 

Electrical, optical and structural properties of TNO polycrystalline films, prepared by post-annealing sputter-deposited amorphous films, as functions of deposition power during amorphous TNO deposition and post-annealing temperature were investigated. The influences of the compositional ratio and structure on TNO films’ optical and electrical properties were also analyzed.