Session Index

Thin-Film Technology and Optical Engineering

Thin-Film Technology and Optical Engineering IV
Saturday, Dec. 7, 2019  10:30-12:15
Presider: Prof. Fang-Hsing Wang、Dr. Bo-Huei Liao
Room: Applied Science and Technology Building R13 (B1F)
Notes:
10:30 - 10:45 Manuscript ID.  0771
Paper No.  2019-SAT-S1004-O001
Hong-Yi Lin
Measurement of Surface Contour of Large Substrate Using Fringe Reflectometry and Subaperture Stitching
Hong-Yi Lin;Chuen-Lin Tien;Yu-Chen Chu

We present a fringe reflectometry combined with subaperture stitching technique to measure the surface profile of 8-inch silicon wafer and 375 mm × 310 mm soda-lime glass substrate. The 3D surface contour and radius of curvature of the large substrates can be obtained.


 
 
10:45 - 11:00 Manuscript ID.  0310
Paper No.  2019-SAT-S1004-O002
Sheng-Bin Chen
Biaxial Stress and Optical Property of Multi-layer Anti-reflector Film Deposited by E-gun Evaporation with IAD for Flexible Substrate
Sheng-Bin Chen;Hsi-Chao Chen;Yu-Ru Lu;Chun-Hao Chang;Cheng-Hsuan Wu;Hong-Jing Jie

The high & low refractive-index multi-layer anti-reflector (AR) film was deposited by E-gun evaporation with IAD on flexible PET, and the biaxial stress and optical property were investigated. The biaxial stress of each layer of AR film was measured by self-made shadow moiré interferometer.

 
 
11:00 - 11:15 Manuscript ID.  0547
Paper No.  2019-SAT-S1004-O003
Shih-Yen Lin
Elemental and Compound 2D Material Hetero-structures: The Investigation of van der Waals Epitaxy
Shih-Yen Lin;Kuan-Chao Chen;Yu-Wei Zhang;Po-Cheng Tsai

Multi-layer elemental 2D materials antimonene, germanene and stanene can be grown on bi-layer MoS2 by using the thermal evaporation. The lower contact resistance and room temperature growth of multi-layer stanene on MoS2 surfaces have demonstrated its potential for contact metal applications for semiconductor 2D materials.

 
 
11:15 - 11:30 Manuscript ID.  0011
Paper No.  2019-SAT-S1004-O004
Han-Yin Liu
All-transparent & Dual-band MgZnO-based Ultraviolet Photodetectors by Mist Atmospheric Pressure Chemical Vapor Deposition
Han-Yin Liu;Jin-Yu Kuo;Yi-Chi Lin;Hong-Shen Lai;Yi-Min Chang;Yu-Yun Lin;Li-Ming Huang

This work proposes a dual-band ultraviolet photodetector using mist atmospheric pressure chemical vapor deposition method to deposit the ZnO and Mg0.3Zn0.7O thin films. The material characteristics are characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and Tauc plot. Additionally, spectral photoresponsivity and dynamic characteristics of the UV PD are investigated.

 
 
11:30 - 11:45 Manuscript ID.  0803
Paper No.  2019-SAT-S1004-O005
Lin-Hsiang Lee
Research on the Anti-reflection Coating for the Far-infrared Applications
Lin-Hsiang Lee;Chia-Yin Chen;Shih-Hao Chan;Sheng-Hui Chen

Zinc oxide and silicon thin-films as the low and high refractive index materials were fabricated by using high-power impulse magnetron sputtering system with stable refractive indices. The anti-reflective coating was achieved by applying the Cauchy formula and the multilayer design. The maximum transmittance is 93.10 % at 7.98 um.

 
 
11:45 - 12:00 Manuscript ID.  0805
Paper No.  2019-SAT-S1004-O006
Yuan-Chieh Lu
Fabrication of IGZO thin films using high power impulse magnetron sputtering
Yuan-Chieh Lu;Sheng-Hui Chen

HiPIMS was used to deposited IGZO thin films. To compare with DC or RF power, the thin films that HiPIMS deposited are denser and have better quality. Sheet resistance decreases, mobility and carrier concentration increases. Overall, the electrical properties become better.

 
 
12:00 - 12:15 Manuscript ID.  0802
Paper No.  2019-SAT-S1004-O007
Yu-Chi Li
Investigation of SiGe thin film for the Applications of Near Infrared Graphene Photodetector
Yu-Chi Li;Sheng-Wen Chen;Gui-Sheng Zeng;Sheng-Hui Chen

The infrared wavelength material, SiGe is a low cost and high quality material. In this research, the SiGe thin-film was grown on the silicon substrate as a virtual germanium substrate. Silicon is diffused into the germanium thin-film by using thermal annealing method to form the near infrared graphene photodetector.