Session Index

This research is the fabrication analysis and application of TFT with amorphous alumina as the gate dielectric layer. Improving the defects into amorphous alumina is critical of the experiment. Therefore, it is hoped that the annealing after the process will further improve the film characteristic and repair the defects.

 

Due to the small surface roughness, the TiO2 film was more suitable for deposition on the silicone layer than the Ta2O5 film. Using TiO2 and SiO2 films, the antireflection coating on the silicone layer was designed by the optical admittance diagram and simplex method.

 

In this work, the indium gallium oxide thin film was deposited on glass substrate by co-sputtering method. Two samples were post-annealing treatment under argon and oxygen, respectively. The device annealed under oxygen ambient exhibited better performance, the responsivity of the device is 0.02A/W at 300nm.

 

An electrically pumped organic polariton device is demonstrated in the intra-cavity pumping scheme, with a polymer-blend OLED as the optical pumping source and a absorptive dye as the strongly coupled medium. A unique phenomenon that the emission from both the upper and lower branches can be observed by appropriate design.

 

In this report, we used lead nitrate as a soluble lead precursor of perovskite, to reduce the dependence on organic solvents in the perovskite manufacturing process. We also explore the thermal annealing effect on each layer of perovskite solar cells based on lead nitrate.

 

We used low temperature to prepare amorphous oxide semiconductor (a-IGZO) thin film transistors. It is discussed that the IGZO thin film is prepared by sputtering on a glass under low temperature and the oxygen partial pressure is affected to affect its electrical property.

 

The different thicknesses of ZnO/MgZnO were deposited on quartz by RF sputter. A dual-band metal-semiconductor-metal photodetector was fabricated by inserting an silicon dioxide layer between ZnO and MgZnO, and its properties were investigated. The ZnO/MgZnO photodetector with a 200-nm-thick MgZnO demonstrated a lower dark current and better dual-band responsivity.

 

In this study, the conductive electrodes as ITO in DSSC is replaced with GZO. The intermittent process and annealing is used to improve Ga-doped ZnO, thereby improving its photoelectric properties and conversion efficiency .

 

In this study, The intermittent number (IN) had been chosen to optimize the quality of AZO seed layer, which had been deposited by RF magnetron sputtering on flexible substrate (PC). The Ag nano-particles will be inserted to form AZO/Ag/AZO layer to applied on touch display panel.

 

In this study¸ Al-doped ZnO (AZO) thin film with CuO nanorods had deposited on flexible substrate in difference duration of Cu by RF magnetron sputtering. In order to apply on touch display, the loading test and optoelectronic properties of thin film had been analyzed.

 

Blue-light Bragg reflector using repetitive Nb2O5/SiO2 thin-film stacks was formed by electron-beam (e-beam) evaporation. The maximum reflectivity of the Bragg reflector achieved is 97.3% at center wavelength 0 = 450nm. The use of e-beam evaporation for Bragg reflector fabrication allows good thin-film thickness control and low material cost.

 

Based on the characteristics of MgF2 film layer, through adjusting coating parameters of electrovaporization system to find stable process of films deposition. The film spectrum can be used to correct the refractive index database of TFCalc software to establish its conformity to the coating machine.

 

MgZnO:Er,N diode was prepared on Si substrate with SiO2 and Al2O3 barrier layer. The character of diode with and without barrier was investigated. Diode with barrier shows characteristic of reverse bias current reducing than that without barrier. The improved diode performance with SiO2 barrier layer was characterized and discussed.

 

Organometal−halide perovskite (MAPbBr3) is intrinsically a highly efficient random laser medium. The lasing threshold is affected by the pumping area and the disorder strength. In this work, the disorder strength is systematically investigated.

 

A novel device of organic light-addressable potentiometric sensor is presented to pH characterized in the study. The organic semiconductor layer modified with different ratio in thermal evaporation was deposited on ITO/glass substrate. pH sensing performance of this device can be evaluated by photocurrent-voltage measurements at different frequency of ac signal.

 

A salinity sensor was fabricated by D-shaped fibers and ZnS thin film based on lossy mode resonance (LMR). The proposed sensor was used to measure the resonance wavelength shift with NaCl solution. As film thickness is 209.7 nm, the resonance wavelength shift is 237 nm. The sensitivity is 47.5 nm/M.

 

The HfO2 and Al2O3 thin films deposited by thermal atomic layer deposition (ALD). ALD has been used to deposit HfO2 and Al2O3 thin films with TEMAH, TMA and H2O at 150 and 200 , respectively. Use the Spectroscopic Ellipsometry to measure optical properties such as absorption and refractive index.

 

Stacked ITO layers showed improved flexibility with resistance variation ration dropping from 2.7 to 1.8 when stacking 2 ITO layers. The enhanced flexibility is due to the electrical networking between pre-cracked layers and reduced film stress, suggesting the possibility of applying ITO electrodes for flexible organic electronics.

 

This paper proposes a fast Fourier transform (FFT) heterodyne moiré surface profilometry using the spatial light modulator. The feasibility of the proposed method was verified with a convex mirror. This method has the merits of a high precision, high resolution, and high stability.

 

Effects of broadband antireflection coatings on the short current of solar cell and the efficiency of luminescent solar concentrator were investigated. The broadband antireflection coatings composed of Ta2O5 and MgF2 films having an average transmittance of 99.1% in wavelength range of 350 to 950nm were prepared by electron beam evaporation.

 

In this study, Al2O3 film fabricated by using sol-gel technique was deposited on PMMA film as a stacked dielectric layer. The structure of organic phototransistors (OPTs) is ITO/PMMA/Al2O3/pentacene/Ag. We modulated the spin-coating speed and UV-ozone treatment to improve the performance of OPTs. The responsivity is enhanced up to 6.636 A/W.

 

The effect of delta doping p-type GaN grown on sapphire substrate by AP-MOVPE was investigated. Different GaN underlayer thickness loop was measured by Hall measurement, XRD and Photoluminescence spectrum. The optimal condition of 1-um-thick delta doping p-type GaN with hole concentration 5.74×1017 cm-3 and 1.78 Ω-cm resistivities were obtained.

 

We propose a DWDM thin-film filter with 200GHz grid. The designed filter consists of three cavities. The dielectric mirrors are composed of a stack of SiO2 and Ta2O5 thin-films. The simulation results show that the designed filter can meet all ITU-T specs.